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PENGARUH BERAT KMnO4 DAN WAKTU OKSIDASI DI METODE HUMMERS PADA MEMBRAN RGO/GO BILAYER DENGAN METODE VAKUM FILTRASI UNTUK APLIKASI MATERIAL PENGHANTAR LISTRIK

Muhammad, Irwansyah (2045) PENGARUH BERAT KMnO4 DAN WAKTU OKSIDASI DI METODE HUMMERS PADA MEMBRAN RGO/GO BILAYER DENGAN METODE VAKUM FILTRASI UNTUK APLIKASI MATERIAL PENGHANTAR LISTRIK. S1 thesis, Sultan Ageng Tirtayasa University.

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Abstract

The use of waste to be reused as raw materials is one of the efforts to prevent environmental pollution. In addition, in the development of the era that continues to run, the use of technology undergoes very fast innovation, so it is developed to become a renewable advanced material. Graphene oxide is an intermediate in the chemical synthesis of graphene before the oxygen functional group is removed. Therefore, graphene oxide and reduced graphene oxide have properties for potential new applications. Recently, reduced graphene oxide and graphene oxide have the potential to be used in modern applications such as sensors, solar cells, transistors circuits interconnects memory, and conductive inks. The graphite material synthesized as graphene has the potential for good absorption of electromagnetic waves, and has better conductivity and mechanical properties. In this study, the rGO/GO bilayer membrane was successfully manufactured using a vacuum filtration deposition method using KMnO4 weight variations of 6 g, 8 g, and 10 g, and oxidation time variations of 2 hours, 3 hours, and 4 hours. The rGO/GO bilayer membrane formed has a smooth surface. The resulting rGO/GO membrane has the highest conductivity value of 66.046 mS/m at a weight of 10 g KMnO4 and an oxidation time of 2 hours. The conductivity test also showed that the more homogeneous and stable the rGO suspension was, the higher the conductivity value obtained. Raman characterization was used in this study, the main purpose of which was to study the electronic characteristics and composition of graphene. The synthesized GO/rGO membrane produced a diffraction peak of 2θ for GO in the range of 9.04o – 11.56o and for rGO in the range of 23.05o – 23.42o.

Item Type: Thesis (S1)
Contributors:
ContributionContributorsNIP/NIM
Thesis advisorTrenggono, Adhitya197804102003121001
Thesis advisorM, Yus Rama Denny198206222009121002
Subjects: Q Science > QC Physics
Q Science > QD Chemistry
T Technology > TD Environmental technology. Sanitary engineering
T Technology > TK Electrical engineering. Electronics Nuclear engineering
T Technology > TP Chemical technology
T Technology > TS Manufactures
U Military Science > U Military Science (General)
Divisions: 03-Fakultas Teknik > 27201-Jurusan Teknik Metalurgi
Depositing User: Muhammad Irwansyah
Date Deposited: 21 Jun 2023 15:10
Last Modified: 21 Jun 2023 15:10
URI: http://eprints.untirta.ac.id/id/eprint/15826

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