Mahendra, Reza (2023) PENGARUH PENAMBAHAN GRAPHENE QUANTUM DOTS PADA ETL PCBM TERHADAP PERFORMA SEL SURYA PEROVSKITE DENGAN KONFIGURASI ITO/PCBM:GQD/CH3NH3PbI3-xClx/PEDOT:PSS/Ag. S1 thesis, Fakultas Teknik Universitas Sultan Ageng Tirtayasa.
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Abstract
The limited availability of energy sources as power generators makes various countries compete to switch to using New Renewable Energy (NRE) including Indonesia. Therefore, intensive development and research are needed to produce solar cell devices that have a high level of efficiency. The emergence of an alternative perovskite-based solar cell device is a breath of fresh air for the development of the solar cell industry because the fabrication process is simpler than conventional silicon-based solar cell devices, but until now the level of efficiency has not been able to match the conventional solar cell devices. The addition of graphene quantum dots (GQDs) to the organic electron transport layer (ETL) phenyl-C61-butyric acid methyl ester (PCBM) on planar N-I-P solar cells resulted in a significant increase in conductivity with increased electron extraction and reduced trap state density from the perovskite layer. Annealing treatment on the PCBM layer can increase electron extraction and reduce charge recombination by smoothing the perovskite surface. In order to determine the effect of adding GQDs and annealing temperature to the PCBM ETL, a perovskite solar cell fabrication study was conducted with variations in GQDs wt% of 0%, 0.5%, and 1% and temperatures of 80°C, 100°C, and 120°C to obtain the largest PCE value from each sample. The effect of adding GQDs to the PCBM ETL layer will reduce absorbance due to the quantum confinement effect property, but increase the PCE of the perovskite solar cell device. The effect of annealing temperature on the PCBM ETL layer is not too significant on the absorbance value. However, it will reduce the PCE of the perovskite solar cell device. The optimal PCE value was obtained at a sample wt% GQDs 0.5% and annealing temperature 80°C which was 0.9390%.
| Item Type: | Thesis (S1) | |||||||||
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| Additional Information: | Terbatasnya sumber energi yang tersedia sebagai tenaga pembangkit listrik membuat berbagai negara berlomba-lomba untuk beralih menggunakan Energi Baru Terbarukan (EBT) termasuk Indonesia. Oleh karena itu, diperlukan suatu pengembangan dan riset secara intensif untuk menghasilkan perangkat sel surya yang memiliki tingkat efisiensi yang tinggi. Munculnya alternatif perangkat sel surya berbasis perovskite menjadi angin segar bagi perkembangan industri sel surya karena proses fabrikasinya yang lebih sederhana dibandingkan perangkat sel surya konvensional berbasis silikon, tetapi hingga saat ini tingkat efisiensinya belum bisa menyamai perangkat sel surya konvensional tersebut. Penambahan graphene quantum dots (GQDs) ke dalam electron transport layer (ETL) organik phenyl-C61-butyric acid methyl ester (PCBM) pada sel surya planar N-I-P menghasilkan kenaikan konduktivitas yang signifikan dengan peningkatan ekstraksi elektron dan mengurangi trap state density dari lapisan perovskite. Perlakuan annealing pada lapisan PCBM dapat meningkatkan ekstraksi elektron dan mengurangi rekombinasi muatan dengan menghaluskan permukaan perovskite. Guna mengetahui pengaruh penambahan GQDs dan temperatur annealing pada ETL PCBM maka dilakukan penelitian pembuatan sel surya perovskite dengan variasi wt% GQDs sebesar 0%, 0,5%, dan 1% serta temperatur 80°C, 100°C, dan 120°C untuk mendapatkan nilai PCE terbesar dari setiap sampel. Pengaruh penambahan GQDs pada lapisan ETL PCBM akan menurunkan absorbansi akibat adanya sifat quantum confinement effect, namun meningkatkan PCE perangkat sel surya perovskite Pengaruh temperatur annealing pada lapisan ETL PCBM tidak terlau signifikan terhadap nilai absorbansi. Namun akan menurunkan PCE perangkat sel surya perovskite. Nilai PCE optimal didapat pada sampel wt% GQDs 0,5% dan temperatur annealing 80°C yaitu sebesar 0,9390%. | |||||||||
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TN Mining engineering. Metallurgy |
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| Divisions: | 03-Fakultas Teknik 03-Fakultas Teknik > 27201-Jurusan Teknik Metalurgi |
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| Depositing User: | Reza Mahendra | |||||||||
| Date Deposited: | 20 Sep 2023 14:02 | |||||||||
| Last Modified: | 06 Oct 2023 14:11 | |||||||||
| URI: | http://eprints.untirta.ac.id/id/eprint/29643 |
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